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The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
(Elsevier Science Sa, 2010)
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ...
Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure
(Elsevier, 2010)
Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of experimental data. To explain NC effect, we have performed dark current ...