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Toplam kayıt 6, listelenen: 1-6
Application of Beta model to heterojunction structure
(Elsevier Science Bv, 2009)
The diode ideality factor is an important parameter in the description of device's electrical behavior. Our goal in this work is to find a practical Procedure for determination of diode ideality factors of heterojunction ...
The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell
(Pergamon-Elsevier Science Ltd, 2009)
The open circuit voltage decay (OCVD) technique has been used to determine the minority carrier lifetime. In this study, an experimental and analytical method is described for determination of minority carrier lifetime at ...
Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure
(Elsevier Science Sa, 2009)
The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (delta), space charge region width (W(D)), interface state density ...
A new method of diode ideality factor extraction from dark I-V curve
(Elsevier Science Bv, 2009)
Most of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two linear regions in the log I-V (current-voltage) graph Of Unipolar ...
Observation of negative photoconductivity in (ZnO)(x)(CdO)(1-x) films
(Pergamon-Elsevier Science Ltd, 2009)
In this study, (ZnO)(x)(CdO)(1-x) films were prepared by ultrasonic spray pyrolysis (USP) technique at a substrate temperature of 400 degrees C. X-ray diffraction patterns of the films indicate that the (ZnO)(x)(CdO)(1-x) ...
Photocapacitance study at p-i-n photodiode by numerical C-V integration
(Pergamon-Elsevier Science Ltd, 2009)
This paper describes a different numerical approach to estimate the impurity profile in a typical p-i-n device by using measured capacitance-voltage (C-V) characteristics. The constructed numerical model has been found to ...