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Toplam kayıt 3, listelenen: 1-3
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
(Amer Inst Physics, 2008)
The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ...
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
(Iop Publishing Ltd, 2008)
In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ...
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
(Iop Publishing Ltd, 2008)
In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ...