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Toplam kayıt 15, listelenen: 1-10
Optical properties of selenium sulfide thin film produced via chemical dropping method
(Springer, 2018)
This paper describes the production of selenium sulfide (SeS2) crystalline thin film on commercial glass substrates, via chemical bath deposition. Transmittance, absorption, dielectric constant and refractive index of the ...
Synthesis and characterization of vanadium oxide thin films on different substrates
(Springer, 2017)
In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. ...
Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
(Gazi Univ, 2017)
In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures ...
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)
The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ...
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...
Improvement effect of the MoO3 interface layer on the p- Si-based Schottky diode
(Springer, 2021)
The aim of this study is to compare the effects of the molybdenum trioxide (MoO3) used as an interface layer in a p-type Si-based metal–semiconductor (MS) junction with and without this layer. For this purpose, Al/p-Si and ...
Temperature Dependent Electrical Transport in Al/Poly(4-vinylphenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method
(Hindawi Ltd, 2016)
Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinylphenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. ...
Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device
(Iop Publishing Ltd, 2009)
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value ...
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
(Maik Nauka/Interperiodica/Springer, 2008)
The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ...