Ara
Toplam kayıt 160, listelenen: 61-70
Simulation for capacitance correction from Nyquist plot of complex impedance-voltage characteristics
(Pergamon-Elsevier Science Ltd, 2008)
The impression of series resistance on unipolar semiconductor device's capacitance-voltage spectrum is discussed by conventional impedance and admittance analysis, and it is shown that series resistance may cause large ...
Thermo-morphological properties of the smectic C* mesophase in new chiral salicyaldimine liquid crystals
(Wiley-V C H Verlag Gmbh, 2008)
Specific textures and their temperature transformations in large temperature interval for the chiral smectic C* mesophase of new liquid crystalline materials, synthesized by our group, have been investigated in detail. ...
Tunneling-Enhanced Recombination in Polycrystalline CdS/CdTe Solar Cells
(Scientific Technical Research Council Turkey-Tubitak, 2006)
The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300 K was investigated. The current-voltage properties of these solar cells is explained ...
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se-2 heterojunction solar cells
(Pergamon-Elsevier Science Ltd, 2005)
This article investigates the results of current-voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se-2 and CdS/CdTe heterojunction solar cells. We propose that the current-voltage ...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ...
A new simulation model for inhomogeneous Au/n-GaN structure
(Pleiades Publishing Inc, 2016)
The larger the device area, the more difficult to carry on homogeneity during the fabrication and following treatments. Structural inhomogeneity may indicate themselves in variations in local electronic device parameters. ...
Exact analytical solution of the diode ideality factor of a pn junction device using Lambert W-function model
(2007)
The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good ...
Magnetic and Magnetocaloric Properties of High-Energy Ball-Milled Nanocrystalline CeMn2Ge2 Compound
(Springer, 2016)
CeMn2Ge2 nanopowders have been obtained by high-energy ball milling for 5 and 10 hours from bulk compound to investigate the effect of milling time on magnetic and magnetocaloric properties. CeMn2Ge2 nanopowders have been ...
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...
Photoluminescence Properties of a New Sm(III) Complex/PMMA Electrospun Composite Fibers
(Springer/Plenum Publishers, 2020)
In this paper, a Sm(III) cluster-based 2D coordination polymer {[Sm(2-stp)center dot 3(H2O)]center dot(H2O)}(n), (where 2-stp = 2-sulfoterephthalate),1has been synthesized hydrothermally and doped into poly(methyl methacrylate ...