Ara
Toplam kayıt 11, listelenen: 1-10
A comparison of the effect of CdCl2 and MgCl2 processing on the transport properties of n-CdS/p-CdTe solar cells and a simple approach to determine their back contact barrier height
(Pergamon-Elsevier Science Ltd, 2016)
A simple approach, which can estimate the barrier height of non-Ohmic back contacts for CdS/CdTe solar cell by using its temperature dependent forward biased current-voltage data, is explained. The method involves modelling ...
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)
The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
Tunneling-Enhanced Recombination in Polycrystalline CdS/CdTe Solar Cells
(Scientific Technical Research Council Turkey-Tubitak, 2006)
The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300 K was investigated. The current-voltage properties of these solar cells is explained ...
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se-2 heterojunction solar cells
(Pergamon-Elsevier Science Ltd, 2005)
This article investigates the results of current-voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se-2 and CdS/CdTe heterojunction solar cells. We propose that the current-voltage ...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ...
Exact analytical solution of the diode ideality factor of a pn junction device using Lambert W-function model
(2007)
The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good ...
Regimes of current transport mechanisms in CdS/CdTe solar cells
(Iop Publishing Ltd, 2019)
Forward bias recombination (current transport) mechanisms have been evaluated for thin film solar cells and correlated to the in-gap trap levels present. Here CdTe/CdS devices were chosen as an archetypal example of a ...
Determination of defect distribution in a Ga-rich ZnO/CdS/Cu (In, Ga) $Se_2$ solar cell by admittance spectroscopy
(2005)
This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)$Se_2$ heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has ...
Admittance and impedance spectroscopy on Cu(In,Ga)Se2 solar cells
(2003)
The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk ...
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures
(Maik Nauka/Interperiodica/Springer, 2007)
The dark alternating current (ac) parameters of BPW34 and BPW41 (Vishay-Telefunken) silicon p-i-n photodiodes arc measured and compared at different temperatures using the impedance spectroscopy technique. The impedance ...