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Toplam kayıt 3, listelenen: 1-3
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)
The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ...
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
(Maik Nauka/Interperiodica/Springer, 2008)
The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ...