Ara
Toplam kayıt 9, listelenen: 1-9
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)
The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...
Improvement effect of the MoO3 interface layer on the p- Si-based Schottky diode
(Springer, 2021)
The aim of this study is to compare the effects of the molybdenum trioxide (MoO3) used as an interface layer in a p-type Si-based metal–semiconductor (MS) junction with and without this layer. For this purpose, Al/p-Si and ...
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
(Maik Nauka/Interperiodica/Springer, 2008)
The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ...
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
(Springer, 2021)
The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters ...
Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device
(SPRINGER, 2022)
A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the ...
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
(Springer, 2022)
In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric ...
Physical investigations of vanadium oxide thin films on p-Si substrate
(Springer, 2022)
In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated ...
Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material
(Springer, 2023)
is study presents the pioneering fabrication of a metal–polymer–semiconductor (MPS) device, where trimethylolpropane triacrylate (TMPTA) was employed as the interface material for the first time. TMPTA offers significant ...