Ara
Toplam kayıt 15, listelenen: 11-15
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
(Springer, 2021)
The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters ...
Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device
(SPRINGER, 2022)
A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the ...
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
(Springer, 2022)
In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric ...
Physical investigations of vanadium oxide thin films on p-Si substrate
(Springer, 2022)
In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated ...
Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material
(Springer, 2023)
is study presents the pioneering fabrication of a metal–polymer–semiconductor (MPS) device, where trimethylolpropane triacrylate (TMPTA) was employed as the interface material for the first time. TMPTA offers significant ...