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Toplam kayıt 10, listelenen: 1-10
n -CdS/ p-Cu (In, Ga)Se2 heteroeklem güneş pilinde akım iletim mekanizmasının belirlenmesi
(2001)
Bu çalışmada Stuttgart Üniversitesi IPE laboratuarlarında hazırlanan ve emici tabakasını oluşturan materyallerin göreli ağırlık oranları; %22.26 Cu, %19.46 In,"%7.27 Ga ve %51.02 Se olan n-CdS/p-Cu(In,Ga)Se2 heteroeklem ...
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)
The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
Tunneling-Enhanced Recombination in Polycrystalline CdS/CdTe Solar Cells
(Scientific Technical Research Council Turkey-Tubitak, 2006)
The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300 K was investigated. The current-voltage properties of these solar cells is explained ...
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se-2 heterojunction solar cells
(Pergamon-Elsevier Science Ltd, 2005)
This article investigates the results of current-voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se-2 and CdS/CdTe heterojunction solar cells. We propose that the current-voltage ...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ...
Exact analytical solution of the diode ideality factor of a pn junction device using Lambert W-function model
(2007)
The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good ...
Determination of defect distribution in a Ga-rich ZnO/CdS/Cu (In, Ga) $Se_2$ solar cell by admittance spectroscopy
(2005)
This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)$Se_2$ heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has ...
Admittance and impedance spectroscopy on Cu(In,Ga)Se2 solar cells
(2003)
The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk ...
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures
(Maik Nauka/Interperiodica/Springer, 2007)
The dark alternating current (ac) parameters of BPW34 and BPW41 (Vishay-Telefunken) silicon p-i-n photodiodes arc measured and compared at different temperatures using the impedance spectroscopy technique. The impedance ...
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
(Maik Nauka/Interperiodica/Springer, 2008)
The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ...