Ara
Toplam kayıt 12, listelenen: 1-10
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
(Amer Inst Physics, 2008)
The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ...
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
(Iop Publishing Ltd, 2008)
In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ...
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
(Iop Publishing Ltd, 2008)
In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ...
Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)(2) heterojunction solar cells
(Amer Inst Physics, 2002)
Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)(2) alloys. The activation energy of ...
The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method
(Springer, 2009)
In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol-gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were ...
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
(Springer, 2021)
The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters ...
Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device
(SPRINGER, 2022)
A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the ...
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
(Springer, 2022)
In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric ...
Physical investigations of vanadium oxide thin films on p-Si substrate
(Springer, 2022)
In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated ...