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dc.contributor.authorTuzun, O.
dc.contributor.authorQiu, Y.
dc.contributor.authorSlaoui, A.
dc.contributor.authorGordon, I.
dc.contributor.authorMaurice, C.
dc.contributor.authorVenkatachalam, S.
dc.contributor.authorPoortmans, J.
dc.date.accessioned2020-11-20T16:33:52Z
dc.date.available2020-11-20T16:33:52Z
dc.date.issued2010
dc.identifier.issn0927-0248
dc.identifier.issn1879-3398
dc.identifier.urihttps://doi.org/10.1016/j.solmat.2010.06.031
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4509
dc.descriptionQiu, Yu/0000-0002-1731-7317; Venkatachalam, Srisaran/0000-0002-6513-6916; slaoui, abdelilah/0000-0001-8202-2833; TUZUN OZMEN, Ozge/0000-0002-5204-3737en_US
dc.descriptionWOS: 000283566300005en_US
dc.description.abstractLarge-grained, n(+)n-type polycrystalline silicon (poly-Si) films were obtained on alumina substrates by combining the aluminium induced crystallization (AlC) process of amorphous silicon and chemical vapour deposition (LPCVD) at high temperature (1000 degrees C) for the epitaxial thickening. The n(+) seed layer was obtained by phosphorus doping of the AlC layer. The electron backscattering diffraction (EBSD) technique was used for the crystallographic analysis of the poly-Si thin films. Seed layers with an average grain size of 7.6 mu m were obtained on alumina substrates by exchange annealing at 475 degrees C for 6 h. Heterojunction emitter (HJE) solar cells were fabricated on such layers and their characteristics were monitored. IQE measurements show that n-type material based solar cells led to a much higher current collection over a large part of the spectrum compared to p-type cells. Accordingly a high effective diffusion length of about 2 mu m for n-type heterojunction solar cells was obtained while it is about 0.9 mu m for the p-type cell. As a result, the first n-type solar cells showed efficiencies above 5%, which is a very promising result considering that no optimization nor texturing have been applied so far. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipANRFrench National Research Agency (ANR)en_US
dc.description.sponsorshipThe authors would like to thank A. Focsa, S. Rogues, S. Schmitt, N. Zimmermann, F. Antoni and M. Amann-Liess for their valuable contributions. This work was funded by ANR Photovoltaique under project named POLYSIVERRE.en_US
dc.item-language.isoengen_US
dc.publisherElsevieren_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPolycrystalline Siliconen_US
dc.subjectAluminium Induced Crystallizationen_US
dc.subjectN-Typeen_US
dc.subjectSolar Cellsen_US
dc.titleProperties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickeningen_US
dc.item-typearticleen_US
dc.contributor.departmenten_US
dc.contributor.departmentTemp[Tuzun, O.; Slaoui, A.; Chatterjee, S.] CNRS, UdS, UMR 7163, InESS, F-67037 Strasbourg, France -- [Qiu, Y.; Gordon, I.; Venkatachalam, S.; Beaucarne, G.; Poortmans, J.] IMEC, B-3001 Leuven, Belgium -- [Maurice, C.] Ecole Mines St Etienne, CNRS, UMR 5146, SMS Ctr, F-42023 St Etienne, Franceen_US
dc.identifier.doi10.1016/j.solmat.2010.06.031
dc.identifier.volume94en_US
dc.identifier.issue11en_US
dc.identifier.startpage1869en_US
dc.identifier.endpage1874en_US
dc.relation.journalSolar Energy Materials and Solar Cellsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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