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dc.contributor.authorKavasoglu, Nese
dc.contributor.authorKavasoglu, A. Sertap
dc.contributor.authorOktik, Sener
dc.date.accessioned2020-11-20T16:35:03Z
dc.date.available2020-11-20T16:35:03Z
dc.date.issued2009
dc.identifier.issn1567-1739
dc.identifier.urihttps://doi.org/10.1016/j.cap.2008.08.002
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4758
dc.descriptionWOS: 000264737400025en_US
dc.description.abstractMost of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two linear regions in the log I-V (current-voltage) graph Of Unipolar devices, one-exponential diode model is not sufficient. We have derived a new model which is named Beta (beta) model for the calculation of diode ideality factor from dark current-voltage characteristic of the device (p-i-n device). Results obtained from our model are considerably in compliance with the experimental data. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.item-language.isoengen_US
dc.publisherElsevier Science Bven_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAnomalous Current-Voltageen_US
dc.subjectCharacterizationen_US
dc.subjectCurvature Functionen_US
dc.subjectP-I-N Deviceen_US
dc.subjectDiode Ideality Factoren_US
dc.subjectBPW34en_US
dc.titleA new method of diode ideality factor extraction from dark I-V curveen_US
dc.item-typearticleen_US
dc.contributor.departmenten_US
dc.contributor.departmentTemp[Kavasoglu, Nese; Kavasoglu, A. Sertap; Oktik, Sener] Mugla Univ, Fac Arts & Sci, Dept Phys, TR-48170 Kotekli, Mugla, Turkeyen_US
dc.identifier.doi10.1016/j.cap.2008.08.002
dc.identifier.volume9en_US
dc.identifier.issue4en_US
dc.identifier.startpage833en_US
dc.identifier.endpage838en_US
dc.relation.journalCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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