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dc.contributor.authorKavasoglu, A. Sertap
dc.contributor.authorKavasoglu, Nese
dc.contributor.authorOktik, Sener
dc.date.accessioned2020-11-20T16:35:19Z
dc.date.available2020-11-20T16:35:19Z
dc.date.issued2009
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.urihttps://doi.org/10.1016/j.sse.2008.11.012
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4803
dc.descriptionWOS: 000263596100023en_US
dc.description.abstractThis paper describes a different numerical approach to estimate the impurity profile in a typical p-i-n device by using measured capacitance-voltage (C-V) characteristics. The constructed numerical model has been found to provide an impurity profile which is almost consistent with those reported in the literature. Until now, no study of the anomalous capacitance response of the silicon p-i-n device induced by the space charge effects due to photo-generated carriers has been reported. In this study, we unveiled this anomalous behaviour through illuminated C-V characteristics. The illuminated C-V result of BPW34 exhibits capacitance oscillations. This behaviour could be augmented by the density of states discontinuities in intrinsic silicon [Biswajit Das. Observation of capacitance-voltage oscillations in porous silicon. Physica E: Low-climens Syst Nanostruct 2004:23(1-2):141-461. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.item-language.isoengen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBPW34en_US
dc.subjectImpurity Profileen_US
dc.subjectIlluminated C-V Measurementen_US
dc.subjectP-I-N Photodiodeen_US
dc.subjectSimpson's Ruleen_US
dc.subjectCapacitance Oscillationsen_US
dc.titlePhotocapacitance study at p-i-n photodiode by numerical C-V integrationen_US
dc.item-typearticleen_US
dc.contributor.departmenten_US
dc.contributor.departmentTemp[Kavasoglu, A. Sertap; Kavasoglu, Nese; Oktik, Sener] Mugla Univ, Fac Arts & Sci, Dept Phys, TR-48170 Kotekli, Mugla, Turkeyen_US
dc.identifier.doi10.1016/j.sse.2008.11.012
dc.identifier.volume53en_US
dc.identifier.issue2en_US
dc.identifier.startpage241en_US
dc.identifier.endpage245en_US
dc.relation.journalSolid-State Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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