| dc.contributor.author | Allakhverdiev, K | |
| dc.contributor.author | Ismailov, N | |
| dc.contributor.author | Salaeva, Z | |
| dc.contributor.author | Mikailov, F | |
| dc.contributor.author | Gulubayov, Aydın | |
| dc.contributor.author | Mamedov, T | |
| dc.contributor.author | Babaev, S | |
| dc.date.accessioned | 2020-11-20T16:45:28Z | |
| dc.date.available | 2020-11-20T16:45:28Z | |
| dc.date.issued | 2002 | |
| dc.identifier.issn | 1559-128X | |
| dc.identifier.issn | 2155-3165 | |
| dc.identifier.uri | https://doi.org/10.1364/AO.41.000148 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12809/5418 | |
| dc.description | WOS: 000173034500021 | en_US |
| dc.description | PubMed ID: 11900431 | en_US |
| dc.description.abstract | We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an epsilon -GaSe crystal and operated at the 1.960-eV line of a He-Ne laser. We demonstrate that the modulation in an Al-epsilon -GaSe-Cu device results mainly from the Franz-Keldysh effect. Relatively high speed and low operating voltage could make these modulators with Schottky-barrier contacts attractive devices in the reds range of the spectrum. (C) 2002 Optical Society of America. | en_US |
| dc.item-language.iso | eng | en_US |
| dc.publisher | Optical Soc Amer | en_US |
| dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Reflective light modulator based on epsilon-GaSe crystal | en_US |
| dc.item-type | article | en_US |
| dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
| dc.contributor.institutionauthor | Gulubayov, Aydın | |
| dc.identifier.doi | 10.1364/AO.41.000148 | |
| dc.identifier.volume | 41 | en_US |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.startpage | 148 | en_US |
| dc.identifier.endpage | 153 | en_US |
| dc.relation.journal | Applied Optics | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
