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dc.contributor.authorBayhan, Habibe
dc.contributor.authorDağkaldiran, E. T.
dc.contributor.authorMajor, J. D.
dc.contributor.authorDurose, K.
dc.contributor.authorBayhan, Murat
dc.date.accessioned2020-11-20T14:41:46Z
dc.date.available2020-11-20T14:41:46Z
dc.date.issued2019
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.urihttps://doi.org/10.1088/1361-6641/ab23b5
dc.identifier.urihttps://hdl.handle.net/20.500.12809/977
dc.descriptionMajor, Jonathan/0000-0002-5554-1985en_US
dc.descriptionWOS: 000471319500008en_US
dc.description.abstractForward bias recombination (current transport) mechanisms have been evaluated for thin film solar cells and correlated to the in-gap trap levels present. Here CdTe/CdS devices were chosen as an archetypal example of a modern thin film solar cell, and a set of devices with a range of design variables was used in order to reveal the full range of behaviours that may operate to limit current transport. Experimental current-voltage-temperature datasets were compared to mathematical models of transport, and the in-gap traps were evaluated by thermal admittance spectroscopy. The current transport mechanisms operating are presented on a temperature-voltage diagram. Three regimes were identified: at 'intermediate' voltages, the behaviour was temperature dependent. From 300 K down to 240 K, thermally activated Shockley Read Hall recombination mediated by a 0.38 eV trap (V-Cd) dominated the transport. Between 200 and 240 K the transport was thermally activated but below 200 K the mechanism became dominated by tunnel assisted interface recombination. At 'low' voltages (and for all devices at all voltages when measured at T < 200 K) band to band recombination is via multi-step tunnelling through in-gap states. At high voltage, the forward current is dominated by the well-known limiting effect of the back Schottky contact to the CdTe which is in reverse bias. The current transport behaviour is also correlated with the n-CdS thickness and CdCl2 processing conditions, both of which are critical to device performance.en_US
dc.description.sponsorshipEPSRCEngineering & Physical Sciences Research Council (EPSRC) [EP/P02484X/1, EP/K005901/1]en_US
dc.description.sponsorshipThe authors acknowledge part funding through EPSRC grants EP/P02484X/1 and EP/K005901/1en_US
dc.item-language.isoengen_US
dc.publisherIop Publishing Ltden_US
dc.item-rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCds/Cdte Solar Cellen_US
dc.subjectCurrent Transport Mechanismsen_US
dc.subjectAdmittance Spectroscopyen_US
dc.titleRegimes of current transport mechanisms in CdS/CdTe solar cellsen_US
dc.item-typearticleen_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorBayhan, Habibe
dc.identifier.doi10.1088/1361-6641/ab23b5
dc.identifier.volume34en_US
dc.identifier.issue7en_US
dc.relation.journalSemiconductor Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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