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The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
Arslan, Engin; Öztürk, Mustafa K; Duygulu, Özgür; Kaya, Ali Arslan; Özçelik, Süleyman; Özbay, Ekmel (Springer Heidelberg, 2009)In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer ...
