Yazar "Özden, Şadan" için listeleme
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Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material
Özden, Pınar; Özden, Şadan; Pakma, Osman; Özenç, Mehmet Emin; Avcı, Nejmettin; Afşin Kariper I. (Springer, 2023)is study presents the pioneering fabrication of a metal–polymer–semiconductor (MPS) device, where trimethylolpropane triacrylate (TMPTA) was employed as the interface material for the first time. TMPTA offers significant ... -
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
Bayhan, Habibe; Özden, Şadan (Pergamon-Elsevier Science Ltd, 2006)The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ... -
Improvement effect of the MoO3 interface layer on the p- Si-based Schottky diode
Özden, Şadan (Springer, 2021)The aim of this study is to compare the effects of the molybdenum trioxide (MoO3) used as an interface layer in a p-type Si-based metal–semiconductor (MS) junction with and without this layer. For this purpose, Al/p-Si and ... -
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, İ. Afşin (Springer, 2022)In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric ... -
Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
Özden, Şadan; Pakma, Osman (Gazi Univ, 2017)In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures ... -
Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device
Kavasoğlu, Abdulkadir Sertap; Tozlu, Cem; Pakma, Osman; Kavasoğlu, Neşe; Özden, Şadan; Metin, Bengül; Oktik, Şener (Iop Publishing Ltd, 2009)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value ... -
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
Özden, Şadan; Bayhan, Habibe; Donmez, A.; Bayhan, M. (Maik Nauka/Interperiodica/Springer, 2008)The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ... -
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, Afşin (Springer, 2021)The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters ... -
Optical properties of selenium sulfide thin film produced via chemical dropping method
Kariper, I. Afşin; Özden, Şadan; Tezel, Fatma Meydaneri (Springer, 2018)This paper describes the production of selenium sulfide (SeS2) crystalline thin film on commercial glass substrates, via chemical bath deposition. Transmittance, absorption, dielectric constant and refractive index of the ... -
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
Bayhan, Habibe; Özden, Şadan (Scientific Technical Research Council Turkey-Tubitak, 2005)Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ... -
Physical investigations of vanadium oxide thin films on p-Si substrate
Bilgen, Y.; Pakma, Osman; Kariper, İ. A.; Özden, Şadan (Springer, 2022)In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated ... -
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
Özden, Şadan; Güllü, Ömer; Pakma, Osman (Edp Sciences S A, 2018)The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ... -
Synthesis and characterization of vanadium oxide thin films on different substrates
Pakma, Osman; Özaydın, Cihat; Özden, Şadan; Kariper, İ. Afşin; Güllü, Ömer (Springer, 2017)In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. ... -
Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, İ. Afşin (SPRINGER, 2022)A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the ... -
Temperature Dependent Electrical Transport in Al/Poly(4-vinylphenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method
Özden, Şadan; Tozlu, Cem; Pakma, Osman (Hindawi Ltd, 2016)Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinylphenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. ...
