The interface properties of an unusual CdS/Cu(In, Ga)Se-2 solar cell have been studied by admittance and impedance spectroscopy. The current transport in this device has previously appeared to be dominated by tunnelling ...

ZnO films were deposited on glass substrate by using spray pyrolysis method. Films were deposited at different solution molarities 0.02 and 0.1 M. The films are highly transparent in the visible range of the electromagnetic ...

The diode ideality factor is an important parameter in the description of device's electrical behavior. Our goal in this work is to find a practical Procedure for determination of diode ideality factors of heterojunction ...

The open circuit voltage decay (OCVD) technique has been used to determine the minority carrier lifetime. In this study, an experimental and analytical method is described for determination of minority carrier lifetime at ...

The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (delta), space charge region width (W(D)), interface state density ...

Most of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two linear regions in the log I-V (current-voltage) graph Of Unipolar ...

A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper ...

This paper describes a different numerical approach to estimate the impurity profile in a typical p-i-n device by using measured capacitance-voltage (C-V) characteristics. The constructed numerical model has been found to ...