A Novel and Compact Subnanosecond Pulse Generator Using Complementary RF BJTs

Abstract

A novel and compact subnanosecond pulse generator circuit has been designed and built using ultra high frequency (UHF) band negative-positive-negative (NPN) and positive-negative-positive (PNP) RF bipolar junction transistors (BJTs). The simulated and calculated output pulse amplitude is about 1.1 V on a 50-Omega load, and the pulsewidth is about 210 ps. The proposed design does not have a base bias, as in conventional single-transistor step-recovery effect (SRE) BJT pulse generators. The dual-transistor action produces very short pulsewidths without base bias. Fabricated prototypes have been measured using a spectrum analyzer. Simulations and measurements are found to be in good agreement.