Kurum Yazarı "Pakma, Osman" Fizik Bölümü Koleksiyonu İçin Listeleme
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The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altındal, S. (Amer Inst Physics, 2008)The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ... -
The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method
Pakma, Osman; Serin, Necmi; Serin, Tülay (Springer, 2009)In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol-gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were ... -
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
Pakma, Osman; Serin, N.; Serin, T.; Altındal, S. (Iop Publishing Ltd, 2008)In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ... -
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altindal, S. (Iop Publishing Ltd, 2008)In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ... -
Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)(2) heterojunction solar cells
Turcu, M; Pakma, Osman; Rau, U (Amer Inst Physics, 2002)Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)(2) alloys. The activation energy of ...