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Now showing items 11-13 of 13
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures
(Maik Nauka/Interperiodica/Springer, 2007)
The dark alternating current (ac) parameters of BPW34 and BPW41 (Vishay-Telefunken) silicon p-i-n photodiodes arc measured and compared at different temperatures using the impedance spectroscopy technique. The impedance ...
Conduction Mechanism of an Infrared Emitting Diode: Impedance Spectroscopy and Current-Voltage Analysis
(Maik Nauka/Interperiodica/Springer, 2012)
The bias dependent complex impedance spectra of a conventional GaAs based infrared emitting diode have been studied in the temperature range 150-300 K. It is found that for bias voltages lower than 0.7 V, the device behaves ...
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
(Maik Nauka/Interperiodica/Springer, 2008)
The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. ...