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Synthesis and characterization of vanadium oxide thin films on different substrates
(Springer, 2017)
In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. ...
Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
(Gazi Univ, 2017)
In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures ...
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
(Amer Inst Physics, 2008)
The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ...
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
(Iop Publishing Ltd, 2008)
In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ...
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
(Iop Publishing Ltd, 2008)
In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ...
Temperature Dependent Electrical Transport in Al/Poly(4-vinylphenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method
(Hindawi Ltd, 2016)
Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinylphenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. ...
Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)(2) heterojunction solar cells
(Amer Inst Physics, 2002)
Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)(2) alloys. The activation energy of ...
Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device
(Iop Publishing Ltd, 2009)
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value ...
The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method
(Springer, 2009)
In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol-gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were ...
