Effect of Sintering Time on the Crystallisation, Morphology, Structure, Electric, Magnetic and Magnetocaloric Properties of La0.80Ag0.20MnO3
Citation
Tokkaya, A., Çetin, S.K., Altan, B. et al. Effect of Sintering Time on the Crystallisation, Morphology, Structure, Electric, Magnetic and Magnetocaloric Properties of La0.80Ag0.20MnO3. J Supercond Nov Magn (2021). https://doi.org/10.1007/s10948-021-06044-0Abstract
The effects of sintering time -(t(S)) on the morphology, structure and magnetic properties of -La0.80Ag0.20MnO3 manganite perovskite investigated. The main purpose of the study was to explore the possibility of increasing the magnetocaloric effect through tuning the magnetic transition temperature depending on the -t(S). -La0.80Ag0.20MnO3 manganite perovskites were prepared by the sol-gel route, and sintering was applied at 1000 degrees C with five different -t(S) (24, 36, 48, 60, 72 h) in the air atmosphere. The relationship between the -tS and the morphology is studied by atomic force microscopy (AFM) and scanning electron microscopy (SEM). -t(S) mainly affects grain size, the distribution of grains, the microstructure, and crystallinity. The crystal phase structure determination was carried out by x-ray diffraction (XRD) analysis. All samples have a characteristic perovskite structure, peaks of which indexed with the rhombohedral phase (R3c). XRD also reveals that all samples have a different ratio of metallic Ag and -MnO2 impurities. Temperature dependent resistivity measurement shows all samples have a metal-insulator phase transition around room temperature, -T-IM = 300 K. There seems to be no systematic change in the magnetic phase transition temperature (Curie temperature, -TC), and the magnetocaloric properties of the samples due to the increasing -t(S). The temperature dependence of the magnetization measurements exhibits a ferromagnetic to paramagnetic transition roughtly at 288 K. The maximum magnetic entropy change values were calculated to be around 2.43 J/kg K under a magnetic field change of 1 T.