Regimes of current transport mechanisms in CdS/CdTe solar cells

Abstract

Forward bias recombination (current transport) mechanisms have been evaluated for thin film solar cells and correlated to the in-gap trap levels present. Here CdTe/CdS devices were chosen as an archetypal example of a modern thin film solar cell, and a set of devices with a range of design variables was used in order to reveal the full range of behaviours that may operate to limit current transport. Experimental current-voltage-temperature datasets were compared to mathematical models of transport, and the in-gap traps were evaluated by thermal admittance spectroscopy. The current transport mechanisms operating are presented on a temperature-voltage diagram. Three regimes were identified: at 'intermediate' voltages, the behaviour was temperature dependent. From 300 K down to 240 K, thermally activated Shockley Read Hall recombination mediated by a 0.38 eV trap (V-Cd) dominated the transport. Between 200 and 240 K the transport was thermally activated but below 200 K the mechanism became dominated by tunnel assisted interface recombination. At 'low' voltages (and for all devices at all voltages when measured at T < 200 K) band to band recombination is via multi-step tunnelling through in-gap states. At high voltage, the forward current is dominated by the well-known limiting effect of the back Schottky contact to the CdTe which is in reverse bias. The current transport behaviour is also correlated with the n-CdS thickness and CdCl2 processing conditions, both of which are critical to device performance.