Konu "MIS Devices" için Fizik Bölümü Koleksiyonu listeleme
Toplam kayıt 2, listelenen: 1-2
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Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
(Gazi Univ, 2017)In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures ... -
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
(Edp Sciences S A, 2018)The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ...