Basit öğe kaydını göster

dc.contributor.authorGunes, Mehmet
dc.contributor.authorCansever, Hamza
dc.contributor.authorYilmaz, Gokhan
dc.contributor.authorSmirnov, Vladimir
dc.contributor.authorFinger, Friedhelm
dc.contributor.authorBrueggemann, Rudolf
dc.date.accessioned2020-11-20T16:21:39Z
dc.date.available2020-11-20T16:21:39Z
dc.date.issued2012
dc.identifier.issn0022-3093
dc.identifier.issn1873-4812
dc.identifier.urihttps://doi.org/10.1016/j.jnoncrysol.2012.01.063
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4059
dc.description24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) - AUG 21-26, 2011 - Nara, JAPANen_US
dc.descriptionGunes, Mehmet/0000-0001-9094-6059; Yilmaz, Gokhan/0000-0003-0834-9736; Smirnov, Vladimir/0000-0002-2215-206X; Finger, Friedhelm/0000-0002-6250-7240; cansever, hamza/0000-0003-0595-4949en_US
dc.descriptionWOS: 000310394700035en_US
dc.description.abstractMetastability effects in microcrystalline silicon (mu c-Si:H) thin films have been investigated using dark conductivity, sigma(D), photoconductivity, sigma(ph), and sub-bandgap absorption methods. Nitrogen and inert gasses can cause reversible aging effect in conductivities but not in the sub-bandgap absorption. However. DI water and O-2 gas treatment result in both reversible and nonreversible effects in conductivities as well as in the sub-bandgap absorption. Only oxygen affected the dark conductivity reversibly in amorphous silicon, a-Si:H, films, other results were unaffected from the aging and annealing processes applied. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipJapan Soc Promot Sci, 147th Comm Amorphous & Nanocrystalline Mat, Commemorat Org Japan World Exposit, Osaka Univ Global COE Program Core Res & Engn Adv Mat Interdisciplinary Educ Ctr Mat Sci, Asahi Glass Fdn, ALS Tech Co Ltd, Crev Inc, Coherent Inc, DAIHEN Corp, Dainippon Screen Co Ltd, HOYA Corp, J A Woollam Co Inc, Kaneka Corp, KEYENCE Corp, Mitsubishi Heavy Industries Ltd, Nano Photon, Nisshin Steel Co Ltd, Samco Inc, Sanyo Elect Co Ltd, Semicond Energy Lab Co Ltd, Shimadzu Corp, SNK Corp, Tokyo Elect Ltd, TOYO Corp, ULVAC Incen_US
dc.item-language.isoengen_US
dc.publisherElsevier Science Bven_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMicrocrystalline Siliconen_US
dc.subjectAtmospheric Agingen_US
dc.subjectMetastabilityen_US
dc.subjectDual Beam Photoconductivityen_US
dc.subjectSub-Bandgap Absorptionen_US
dc.titleMetastability effects in hydrogenated microcrystalline silicon thin films investigated by the dual beam photoconductivity methoden_US
dc.item-typeconferenceObjecten_US
dc.contributor.departmenten_US
dc.contributor.departmentTemp[Gunes, Mehmet; Cansever, Hamza; Yilmaz, Gokhan] Mugla Univ, Fac Sci, Dept Phys, TR-48000 Kotekli Yerleskesi, Mugla, Turkey -- [Smirnov, Vladimir; Finger, Friedhelm] Forschungszentrum Julich, IEK 5 Photovolta, D-52425 Julich, Germany -- [Brueggemann, Rudolf] Carl von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germanyen_US
dc.identifier.doi10.1016/j.jnoncrysol.2012.01.063
dc.identifier.volume358en_US
dc.identifier.issue17en_US
dc.identifier.startpage2074en_US
dc.identifier.endpage2077en_US
dc.relation.journalJournal of Non-Crystalline Solidsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

DosyalarBoyutBiçimGöster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster