| dc.contributor.author | Bayhan, Habibe | |
| dc.contributor.author | Özden, Şadan | |
| dc.date.accessioned | 2020-11-20T16:38:22Z | |
| dc.date.available | 2020-11-20T16:38:22Z | |
| dc.date.issued | 2006 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.issn | 1879-2405 | |
| dc.identifier.uri | https://doi.org/10.1016/j.sse.2006.08.015 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12809/5179 | |
| dc.description | WOS: 000242060500017 | en_US |
| dc.description.abstract | The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to the p/i interface plays a significant role in the dark forward current. We show that Bardeen's model for a modified Schottky-like interfacial junction can be satisfactorily applied to describe the reverse current-voltage characteristics at intermediate bias voltages. (c) 2006 Elsevier Ltd. All rights reserved. | en_US |
| dc.item-language.iso | eng | en_US |
| dc.publisher | Pergamon-Elsevier Science Ltd | en_US |
| dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | BPW34 | en_US |
| dc.subject | p-i-n | en_US |
| dc.subject | current transport | en_US |
| dc.title | Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode | en_US |
| dc.item-type | article | en_US |
| dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
| dc.contributor.institutionauthor | Bayhan, Habibe | |
| dc.contributor.institutionauthor | Özden, Şadan | |
| dc.identifier.doi | 10.1016/j.sse.2006.08.015 | |
| dc.identifier.volume | 50 | en_US |
| dc.identifier.issue | 9-10 | en_US |
| dc.identifier.startpage | 1563 | en_US |
| dc.identifier.endpage | 1566 | en_US |
| dc.relation.journal | Solid-State Electronics | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
