dc.contributor.author | Mikailov, F. A. | |
dc.contributor.author | Kazan, S. | |
dc.contributor.author | Rameev, B. Z. | |
dc.contributor.author | Kulibekov, A. M. | |
dc.contributor.author | Kerimova, E. | |
dc.contributor.author | Aktas, B. | |
dc.date.accessioned | 2020-11-20T16:39:05Z | |
dc.date.available | 2020-11-20T16:39:05Z | |
dc.date.issued | 2006 | |
dc.identifier.issn | 0038-1098 | |
dc.identifier.issn | 1879-2766 | |
dc.identifier.uri | https://doi.org/10.1016/j.ssc.2006.03.005 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12809/5248 | |
dc.description | Rameev, Bulat Z/0000-0003-0828-8312; Rameev, Bulat/0000-0003-0828-8312; Ulubey, A.M./0000-0001-6046-3582 | en_US |
dc.description | WOS: 000237763000005 | en_US |
dc.description.abstract | TIGaS2, single crystal doped by paramagnetic Fe3+ structure of EPR spectra of paramagnetic Fe3+ ions was observed. The spectra reveal a nearly orthorhombic symmetry of the crystal field (CF) on the Fe3+ ions. Two groups each consisting of four equivalent Fe3+ centers were observed in the EPR spectra. The local symmetry of the crystal field on the Fe3+ centers and CF parameters were determined. Experimental results indicate that the Fe ions substitute Ga at the center of the GaS4 tetrahedrons. The rhombic distortion of the sulfur ligand CF is attributed to the effect of TI ions located in the trigonal cavities between the tetrahedral complexes. The observed twinning of the resonance lines indicates a presence of two non-equivalent positions of TI ions that confirms their zigzag alignment in the TIGaS2 crystal structure. (c) 2006 Elsevier Ltd. All rights reserved. | en_US |
dc.item-language.iso | eng | en_US |
dc.publisher | Pergamon-Elsevier Science Ltd | en_US |
dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | ferroelectrics | en_US |
dc.subject | crystal field | en_US |
dc.subject | electron paramagnetic resonance | en_US |
dc.subject | fine structure splitting | en_US |
dc.title | Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal | en_US |
dc.item-type | article | en_US |
dc.contributor.department | MÜ | en_US |
dc.contributor.departmentTemp | Gebze Inst Technol, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey; Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan; Kazan Phys Tech Inst, Kazan 420029, Russia; Mugla Univ, Dept Phys, TR-48000 Mugla, Turkey | en_US |
dc.identifier.doi | 10.1016/j.ssc.2006.03.005 | |
dc.identifier.volume | 138 | en_US |
dc.identifier.issue | 5 | en_US |
dc.identifier.startpage | 239 | en_US |
dc.identifier.endpage | 241 | en_US |
dc.relation.journal | Solid State Communications | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |