| dc.contributor.author | Bayhan, Habibe | |
| dc.date.accessioned | 2020-11-20T16:39:11Z | |
| dc.date.available | 2020-11-20T16:39:11Z | |
| dc.date.issued | 2006 | |
| dc.identifier.issn | 1300-0101 | |
| dc.identifier.issn | 1303-6122 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12809/5257 | |
| dc.description | 0000-0001-7792-0305 | en_US |
| dc.description | WOS: 000420226900006 | en_US |
| dc.description.abstract | The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300 K was investigated. The current-voltage properties of these solar cells is explained via tunnelling enhanced bulk and interface recombination models which give a quantitative description of the electronic loss mechanisms in the chalcopyrite-based heterojunction solar cells. The temperature dependence of the saturation current and the diode ideality factors of the as-grown and CdCl2 processed CdTe solar cells are shown to be well described by this model. | en_US |
| dc.item-language.iso | eng | en_US |
| dc.publisher | Scientific Technical Research Council Turkey-Tubitak | en_US |
| dc.item-rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | CdS/CdTe | en_US |
| dc.subject | Solar cell | en_US |
| dc.subject | Tunnelling | en_US |
| dc.subject | Recombination | en_US |
| dc.title | Tunneling-Enhanced Recombination in Polycrystalline CdS/CdTe Solar Cells | en_US |
| dc.item-type | article | en_US |
| dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
| dc.contributor.institutionauthor | Bayhan, Habibe | |
| dc.identifier.volume | 30 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.startpage | 109 | en_US |
| dc.identifier.endpage | 114 | en_US |
| dc.relation.journal | Turkish Journal of Physics | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
