Basit öğe kaydını göster

dc.contributor.authorOktik, Şener
dc.contributor.authorRussell, GJ
dc.contributor.authorBrinkman, AW
dc.date.accessioned2020-11-20T16:45:33Z
dc.date.available2020-11-20T16:45:33Z
dc.date.issued1996
dc.identifier.issn0022-0248
dc.identifier.urihttps://doi.org/10.1016/0022-0248(95)00853-5
dc.identifier.urihttps://hdl.handle.net/20.500.12809/5443
dc.description7th International Conference on II-VI Compounds and Devices - AUG 13-18, 1995 - HERIOT WATT UNIV, EDINBURGH, SCOTLANDen_US
dc.descriptionWOS: A1996UH32400043en_US
dc.description.abstractLayers of ZnO have been deposited onto glass substrates by ''photo-assisted'' spray pyrolysis using zinc chloride and zinc acetate as precursors in aqueous and non-aqueous solutions. The structure of these films has been shown by reflection high energy electron diffraction (RHEED) to be hexagonal, the crystallites exhibiting a pronounced preferred orientation with their (0002) planes lying parallel to the substrate. The transmission properties of layers deposited using an aqueous solution of zinc acetate were found to be superior. In their as-deposited form the films repeatedly exhibited carrier concentration, Hall mobility and resistivity values of similar to (1-2) X 10(17) cm(-3), similar to 0.1-0.2 cm(2) V-1 s(-1) and similar to 150-600 Ohm . cm respectively. However, following annealing at 400 degrees C for 15 min in forming gas (H-2 + N-2), these parameters improved to similar to 5 X 10(19) cm(-3), similar to 29 cm(2) V-1 s(-1) and similar to 1.5 X 10(-2) Ohm . cm respectively. Annealing did not change the transmittance but there was a noticeable improvement in the degree of preferred orientation. The considerable improvement in the electrical properties after annealing can be largely attributed to the increases in carrier concentration and mobility due to the change in stoichiometry and possibly a reduction in inter-granular potential barriers respectively.en_US
dc.description.sponsorshipHeriot Watt Univ, Lothian & Edinburgh Enterprise Ltd, City Edinburgh, VG Semicon Ltd, EPI, Sony Corp, Megatech, Compound Semiconductor Magazine, III Vs Rev, Johnson Matthey, Oxford Appl Res, Thomas Swan, Spectra Physen_US
dc.item-language.isoengen_US
dc.publisherElsevier Science Bven_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnO layersen_US
dc.titleProperties of ZnO layers deposited by ''photo-assisted'' spray pyrolysisen_US
dc.item-typeconferenceObjecten_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.doi10.1016/0022-0248(95)00853-5
dc.identifier.volume159en_US
dc.identifier.issue1-4en_US
dc.identifier.startpage195en_US
dc.identifier.endpage199en_US
dc.relation.journalJournal of Crystal Growthen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster