Yazar "Serin, N." için listeleme
-
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altındal, S. (Amer Inst Physics, 2008)The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ... -
The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method
Pakma, O.; Serin, N.; Serin, T.; Altindal, S. (Springer, 2009)In this study, the forward bias current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Al/TiO2/p-Si (MIS) structures derived using the sol-gel method have been investigated and compared at various ... -
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
Pakma, Osman; Serin, N.; Serin, T.; Altındal, S. (Iop Publishing Ltd, 2008)In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ... -
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altindal, S. (Iop Publishing Ltd, 2008)In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ...
