Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material

Abstract

is study presents the pioneering fabrication of a metal–polymer–semiconductor (MPS) device, where trimethylolpropane triacrylate (TMPTA) was employed as the interface material for the first time. TMPTA offers significant advantages in terms of optoelectronic device fabrication and encapsulation, owing to its high light transmittance. The device was thoroughly characterized employing scanning electron microscopy (SEM) and electrical measurements, including current–voltage (I– V) and capacitance–voltage (C– V) analyses. The fabricated device demonstrated a notably elevated rectification ratio of 3000 along with a low reverse bias saturation current. Subsequently, the ideality factor and junction barrier potential were calculated to be 3.65 and 0.79 eV, respectively. Due to the low viscosity of the TMPA interface material, it was calculated that a series resistance of 6.7 kΩ calculated in the forward-bias region as a result of obtaining a thickness of approximately 200 nm by means of employing SEM measurements. The photodiode behavior of the device was shown through I– V measurements conducted under diverse illumination intensities. The observed exponential relationship between the photocurrent and illumination intensity strongly suggests the prevalence of the nanomolecular reassembly mechanism within the device. Additionally, frequency- and voltage-dependent capacitance measurements unveiled the substantial impact of state densities and series resistance effects at the interfaces of semiconductor–polymer and metal–semiconductor, resulting in noteworthy alterations in the device’s performance