| dc.contributor.author | Özden, Şadan | |
| dc.contributor.author | Güllü, Ömer | |
| dc.contributor.author | Pakma, Osman | |
| dc.date.accessioned | 2020-11-20T14:49:54Z | |
| dc.date.available | 2020-11-20T14:49:54Z | |
| dc.date.issued | 2018 | |
| dc.identifier.issn | 1286-0042 | |
| dc.identifier.issn | 1286-0050 | |
| dc.identifier.uri | https://doi.org/10.1051/epjap/2018180004 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12809/1385 | |
| dc.description | 000-0003-0716-9194 | en_US |
| dc.description | WOS: 000441255100001 | en_US |
| dc.description.abstract | The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C V and G V measurements. The different barrier heights from the I V and C V measurements indicate possible interface and trap states or barrier inhomogeneities. | en_US |
| dc.item-language.iso | eng | en_US |
| dc.publisher | Edp Sciences S A | en_US |
| dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | MIS Devices | en_US |
| dc.title | Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices | en_US |
| dc.item-type | article | en_US |
| dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
| dc.contributor.institutionauthor | Özden, Şadan | |
| dc.identifier.doi | 10.1051/epjap/2018180004 | |
| dc.identifier.volume | 82 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.relation.journal | European Physical Journal-Applied Physics | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
