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dc.contributor.authorGülebağlan, S. Erden
dc.contributor.authorOylumluoğlu, G.
dc.contributor.authorErkaslan, U.
dc.contributor.authorSiddiki, Afif
dc.contributor.authorSökmen, I.
dc.date.accessioned2020-11-20T16:22:19Z
dc.date.available2020-11-20T16:22:19Z
dc.date.issued2012
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.urihttps://doi.org/10.1016/j.physe.2012.03.017
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4135
dc.descriptionWOS: 000306196900067en_US
dc.description.abstractWe study the effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. The short-range potential fluctuations ( less than or similar to 20 nm) stems from single impurities and defines the Landau level broadening, whereas, the long-range potential fluctuations ( greater than or similar to 200 nm) are calculated from the potential overlap of many-impurities, which in turn determines the widths of the plateaus. The short-range part is taken into account via self-consistent Born approximation hence determining the conductivities and a local version of Ohm's law is utilized to define charge transport. We investigate the long range potential fluctuations taking into account interaction effects and explore its effect on the formation of quantum Hall plateaus depending on the number of impurities, the amplitude of the impurity potential and the separation thickness by solving the 3D Poisson equation iteratively. We discuss the long range part of the potential fluctuations by investigating the Coulomb interaction of the two dimension electron gas numerically. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the influence of level broadening is suppressed at narrow Hall bars. (c) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [109T083, IU-BAP:6970]en_US
dc.description.sponsorshipThis work was partially supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant no. 109T083, IU-BAP:6970.en_US
dc.item-language.isoengen_US
dc.publisherElsevieren_US
dc.item-rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectConductivityen_US
dc.titleThe effect of disorder on integer quantized Hall effecten_US
dc.item-typearticleen_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorSiddiki, Afif
dc.identifier.doi10.1016/j.physe.2012.03.017
dc.identifier.volume44en_US
dc.identifier.issue7-8en_US
dc.identifier.startpage1495en_US
dc.identifier.endpage1502en_US
dc.relation.journalPhysica E-Low-Dimensional Systems & Nanostructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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