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The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics

dc.contributor.authorKavasoglu, A. Sertap
dc.contributor.authorYakuphanoglu, Fahrettin
dc.contributor.authorKavasoglu, Nese
dc.contributor.authorPakma, Osman
dc.contributor.authorBirgi, Ozcan
dc.contributor.authorOktik, Sener
dc.date.accessioned2020-11-20T16:34:11Z
dc.date.available2020-11-20T16:34:11Z
dc.date.issued2010
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2009.11.128
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4589
dc.descriptionPakma, Osman/0000-0002-3098-0973en_US
dc.descriptionWOS: 000276018900098en_US
dc.description.abstractIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.item-language.isoengen_US
dc.publisherElsevier Science Saen_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectI-V Characteristicsen_US
dc.subjectIdeality Factoren_US
dc.subjectSeries Resistanceen_US
dc.subjectBarrier Heighten_US
dc.subjectMEH-PPVen_US
dc.subjectHeterojunction Diodeen_US
dc.titleThe analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristicsen_US
dc.item-typearticleen_US
dc.contributor.departmentMÜen_US
dc.contributor.departmentTemp[Kavasoglu, A. Sertap; Kavasoglu, Nese; Pakma, Osman; Birgi, Ozcan; Oktik, Sener] Mugla Univ, Fac Arts & Sci, Dept Phys, TR-48170 Kotekli, Mugla, Turkey -- [Kavasoglu, A. Sertap; Kavasoglu, Nese; Pakma, Osman; Birgi, Ozcan; Oktik, Sener] Mugla Univ, Clean Energy Res & Dev Ctr, TR-48170 Kotekli, Mugla, Turkey -- [Yakuphanoglu, Fahrettin] Firat Univ, Dept Phys, TR-23119 Elazig, Turkeyen_US
dc.identifier.doi10.1016/j.jallcom.2009.11.128
dc.identifier.volume492en_US
dc.identifier.issue1-2en_US
dc.identifier.startpage421en_US
dc.identifier.endpage426en_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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