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dc.contributor.authorYilmaz, G.
dc.contributor.authorTuran, E.
dc.contributor.authorGunes, M.
dc.contributor.authorSmirnov, V.
dc.contributor.authorFinger, F.
dc.contributor.authorBrueggemann, R.
dc.date.accessioned2020-11-20T16:34:36Z
dc.date.available2020-11-20T16:34:36Z
dc.date.issued2010
dc.identifier.issn1862-6351
dc.identifier.urihttps://doi.org/10.1002/pssc.200982885
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4679
dc.description23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23) - AUG 23-28, 2009 - Utrecht, NETHERLANDSen_US
dc.descriptionWOS: 000287213400048en_US
dc.description.abstractInstability effects on the dark conductivity (sigma(Dark)) and photoconductivity (sigma(photo)) of microcrystalline silicon films with different microstructures deposited on smooth and rough substrates, after exposure to different storage conditions have been investigated. Samples stored in vacuum are less affected by aging than films stored in air and sealed plastic bags filled with N-2 gas. The aging is reversible after annealing at 450 K. Thin films deposited on smooth and rough substrates with the same thickness and silane concentrations (SC) during the same deposition run showed similar aging effects. Thick samples exhibited a decrease in sigma(Dark), while both decrease and increase in sigma(Dark) occur in thin samples after aging. For each sample, sigma(Dark) and sigma(photo) presented the same type of aging, independent of thickness and type of substrate used. The applicability of the steady-state photocarrier grating technique was successfully tested on the rough substrates. Light-induced degradation studies confirm the dependence of the Staebler-Wronski effect on the crystallinity of the material. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.description.sponsorshipTUBITAK of TurkeyTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [108T218]; BMBF of GermanyFederal Ministry of Education & Research (BMBF) [TUR 08/003]en_US
dc.description.sponsorshipWe acknowledge the contributions from R. Carius, A. Lambertz and M. Hulsbeck to this work and financial support from TUBITAK of Turkey (project number 108T218) and the BMBF of Germany (project number TUR 08/003)en_US
dc.item-language.isoengen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofseriesPhysica Status Solidi C-Current Topics in Solid State Physics
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleInstability effects in hydrogenated microcrystalline silicon thin filmsen_US
dc.item-typeconferenceObjecten_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.doi10.1002/pssc.200982885
dc.identifier.volume7en_US
dc.identifier.issue3-4en_US
dc.identifier.startpage700en_US
dc.identifier.endpage703en_US
dc.relation.journalPhysica Status Solidi C - Current Topics in Solid State Physics, Vol 7 No 3-4en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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