Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure
Özet
The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (delta), space charge region width (W(D)), interface state density (N(ss)), series resistance (R(s)), acceptor concentration (N(A)) of the Au/Poly(4-vinyl phenol)/p-Si structure have been extracted from the current-voltage (I-V), frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. It is pointed out that the interface states lead to deviation of the ideality factor value from I and frequency dispersion of the C-V characteristics. N(ss) profiles as a function of (E(ss) - E(v)) obtained using I-V and low frequency C-V measurements are in good agreement. N(ss) values varying between 10(12) and 10(13) eV(-1) cm(-2) mean that Poly(4-vinyl phenol) is a candidate for insulator layer forming on Si as powerful as SiN(4), SnO(2), TiO(2). (C) 2009 Elsevier B.V. All rights reserved.
