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dc.contributor.authorKulibekov, AM
dc.contributor.authorOlijnyk, HP
dc.contributor.authorJephcoat, AP
dc.contributor.authorSalaeva, ZY
dc.contributor.authorOnari, S
dc.contributor.authorAllakhverdiev, KR
dc.date.accessioned2020-11-20T16:45:24Z
dc.date.available2020-11-20T16:45:24Z
dc.date.issued2003
dc.identifier.issn0370-1972
dc.identifier.issn1521-3951
dc.identifier.urihttps://doi.org/10.1002/pssb.200301613
dc.identifier.urihttps://hdl.handle.net/20.500.12809/5395
dc.description10th International Conference on High Pressures in Semiconductor Physics (HPSP-X) - AUG 05-08, 2002 - UNIV SURREY, GUILDFORD, ENGLANDen_US
dc.descriptionWOS: 000181009000057en_US
dc.description.abstractRaman scattering in epsilon-GaSe has been investigated at room temperature in a diamond anvil cell by using helium gas as a pressure transmitting medium. The first observation of the solid-solid phase transition under pressure from a hexagonal structure at ambient pressure to a NaCl-type at around 29.2 GPa is reported. A photoinduced change in the pressurised crystal was observed. The transition under pressure was found to be irreversible at room temperature. It was shown that the pressurised form of epsilon-GaSe at ambient conditions most probably belongs to the gamma-type as characterised by an increased intensity of the Raman modes at 234 cm(-1) and 250 cm(-1).en_US
dc.item-language.isoengen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.item-rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhysicsen_US
dc.titleRaman scattering under pressure and the phase transition in epsilon-GaSeen_US
dc.item-typeconferenceObjecten_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorKulibekov, AM
dc.identifier.doi10.1002/pssb.200301613
dc.identifier.volume235en_US
dc.identifier.issue2en_US
dc.identifier.startpage517en_US
dc.identifier.endpage520en_US
dc.relation.journalPhysica Status Solidi B-Basic Solid State Physicsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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