| dc.contributor.author | Horsfall, A.B. | |
| dc.contributor.author | Oktik, Şener | |
| dc.contributor.author | Terry, I. | |
| dc.contributor.author | Brinkman, A.W. | |
| dc.date.accessioned | 2020-11-20T16:47:47Z | |
| dc.date.available | 2020-11-20T16:47:47Z | |
| dc.date.issued | 1996 | |
| dc.identifier.issn | 0022-0248 | |
| dc.identifier.uri | https://doi.org/10.1016/0022-0248(95)00882-9 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12809/5931 | |
| dc.description.abstract | Preliminary electrical measurements of mercury manganese telluride (MMT) films, grown by metalorganic vapour phase epitaxy (MOVPE), are reported. The epitaxial films were grown on insulating (100)GaAs substrates with a buffer layer of ZnTe and CdTe by the interdiffused multilayer process (IMP). Electrical transport measurements were made on samples of x = 0.05-0.08 and x = 0.08-0.11, at magnetic fields of up to 0.38 T, and for the temperature range of 20-300 K. It is demonstrated that both n- and p-type epilayers may be produced depending upon growth conditions, with extrinsic electron and hole concentrations of order 1015 and 1014 cm-3, respectively. | en_US |
| dc.item-language.iso | eng | en_US |
| dc.publisher | Elsevier | en_US |
| dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Epitaxy | |
| dc.title | Electrical measurements of Hg1 - xMnxTe films grown by metalorganic vapour phase epitaxy | en_US |
| dc.item-type | article | en_US |
| dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
| dc.contributor.institutionauthor | Oktik, Şener | |
| dc.identifier.doi | 10.1016/0022-0248(95)00882-9 | |
| dc.identifier.volume | 159 | en_US |
| dc.identifier.issue | 1-4 | en_US |
| dc.identifier.startpage | 1085 | en_US |
| dc.identifier.endpage | 1089 | en_US |
| dc.relation.journal | Journal of Crystal Growth | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
