dc.contributor.author | Bayhan, Habibe | |
dc.date.accessioned | 2020-11-20T17:51:17Z | |
dc.date.available | 2020-11-20T17:51:17Z | |
dc.date.issued | 2005 | |
dc.identifier.issn | 1300-0101 | |
dc.identifier.issn | 1303-6122 | |
dc.identifier.uri | https://app.trdizin.gov.tr//makale/TXpnNU5EazU | |
dc.identifier.uri | https://hdl.handle.net/20.500.12809/8717 | |
dc.description.abstract | This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)$Se_2$ heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cu(In,Ga)$Se_2$ layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of $1.2xl0^{17} eV^{-1}cm^{-3}$. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to a Ga content of about $xapprox 0.7$ with x the ratio Ga/(Ga+In). | en_US |
dc.item-language.iso | eng | en_US |
dc.item-rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Solar cell | en_US |
dc.title | Determination of defect distribution in a Ga-rich ZnO/CdS/Cu (In, Ga) $Se_2$ solar cell by admittance spectroscopy | en_US |
dc.item-type | other | en_US |
dc.contributor.department | MÜ, Fen Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Bayhan, Habibe | |
dc.identifier.volume | 29 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.startpage | 17 | en_US |
dc.identifier.endpage | 24 | en_US |
dc.relation.journal | Turkish Journal of Physics | en_US |
dc.relation.publicationcategory | Diğer | en_US |