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dc.contributor.authorBayhan, Habibe
dc.date.accessioned2020-11-20T17:51:17Z
dc.date.available2020-11-20T17:51:17Z
dc.date.issued2005
dc.identifier.issn1300-0101
dc.identifier.issn1303-6122
dc.identifier.urihttps://app.trdizin.gov.tr//makale/TXpnNU5EazU
dc.identifier.urihttps://hdl.handle.net/20.500.12809/8717
dc.description.abstractThis article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)$Se_2$ heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cu(In,Ga)$Se_2$ layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of $1.2xl0^{17} eV^{-1}cm^{-3}$. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to a Ga content of about $xapprox 0.7$ with x the ratio Ga/(Ga+In).en_US
dc.item-language.isoengen_US
dc.item-rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSolar cellen_US
dc.titleDetermination of defect distribution in a Ga-rich ZnO/CdS/Cu (In, Ga) $Se_2$ solar cell by admittance spectroscopyen_US
dc.item-typeotheren_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorBayhan, Habibe
dc.identifier.volume29en_US
dc.identifier.issue1en_US
dc.identifier.startpage17en_US
dc.identifier.endpage24en_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.relation.publicationcategoryDiğeren_US


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