Improvement effect of the MoO3 interface layer on the p- Si-based Schottky diode

Abstract

The aim of this study is to compare the effects of the molybdenum trioxide (MoO3) used as an interface layer in a p-type Si-based metal–semiconductor (MS) junction with and without this layer. For this purpose, Al/p-Si and Al/MoO3/p-Si devices were prepared by the thermal evaporation method. Then, those have been investigated by electrical characterization methods. According to the XRD pattern, the produced interface layer is well matched with the orthorhombic structure of MoO3. The current–voltage (I–V) measurements for the MoO3 layer show that the rectification factor increases 194 times, the reverse bias saturation current decreases from 3.18 × 10–7 A to 3.27 × 10–9 A, and the series resistance values reduce from 2143.3 to 1255.1 Ω. The capacitance–voltage (C–V) measurements indicate that the carrier density decreases from 7 × 1012 to 6 × 1010 cm−3 and the density profile becomes smoother with the oxide layer. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.