NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device

Abstract

The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters of the device such as rectification ratio (RR), ideality factor (n), and barrier height (phi(B)) were determined from the current-voltage (I-V) measurements according to thermionic emission theory (TE). Series resistance, R-S, values were also calculated by Norde and Cheung methods in the range of 2.4-3 k omega. According to the reverse bias I-V measurements, the current was governed by Frenkel-Poole Emission (FPE) in the entire region. The voltage-dependent capacitance (C) and the conductance (G/omega) measurements were investigated at particular frequencies between 20 kHz and 1 MHz. The dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta), and the complex electric modulus (M) were calculated using the measured C and G parameters, and it was seen that the interface states and surface dipoles at the interfacial layer were effective in the behavior of the device in alternating current. Additionally, the morphological properties of the thin film were studied by scanning electron microscopy (SEM). We observed that (NOA61) organic interlayer may be a noticeable alternative to a variety of electronic applications.