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Electrical characterization of a-Si:H(n)/c-Si(p) structure
Kavasoglu, A. Sertap; Birgi, Ozcan; Kavasoglu, Nese; Oylumluoglu, Gorkem; Kodolbas, A. Osman; Kangi, Rifat; Yilmaz, Okan (Elsevier Science Sa, 2011)In this study, n-type hydrogenated amorphous silicon (a-Si:H) was fabricated on p-type crystalline silicon (c-Si) substrates to obtain heterojunction diodes. The amorphous films were obtained by the Plasma Enhanced Chemical ... -
Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study
Kavasoglu, A. Sertap; Kavasoglu, Nese; Oylumluoglu, Gorkem (Elsevier Science Sa, 2011)GaN based devices are highly promising optoelectronic devices for many years due to their useful applications in photovoltaic energy conversation, fiber optic communication and atmosphere monitoring. GaN based devices such ... -
The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
Oylumluoglu, Gorkem; Kavasoglu, A. Sertap; Kavasoglu, Nese (Elsevier Science Sa, 2012)The dielectric properties of the devices can be studied by using admittance spectroscopy (AS). Majority carrier traps are experimentally analyzed without sophisticated mathematical manipulation. Experimental evidence ... -
A thermostatistical approach to protein structures
Oylumluoglu, Gorkem; Buyukkilic, Fevzi; Demirhan, Dogan (Elsevier Science Bv, 2008)In this study, the relation between the additional heat capacities of proteins have been obtained. The expressions for the increments of enthalpy Delta H, entropy Delta S and Gibbs energy Delta G which are encountered in ...