Yazar "Pakma, Osman" için listeleme
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The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
Kavasoglu, A. Sertap; Yakuphanoglu, Fahrettin; Kavasoglu, Nese; Pakma, Osman; Birgi, Ozcan; Oktik, Sener (Elsevier Science Sa, 2010)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altındal, S. (Amer Inst Physics, 2008)The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range of 80-300 K. An abnormal decrease in the zero bias barrier height ... -
The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method
Pakma, Osman; Serin, Necmi; Serin, Tülay (Springer, 2009)In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol-gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were ... -
Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material
Özden, Pınar; Özden, Şadan; Pakma, Osman; Özenç, Mehmet Emin; Avcı, Nejmettin; Afşin Kariper I. (Springer, 2023)is study presents the pioneering fabrication of a metal–polymer–semiconductor (MPS) device, where trimethylolpropane triacrylate (TMPTA) was employed as the interface material for the first time. TMPTA offers significant ... -
The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface
Özerden, Enise; Özden, Pınar; Afşin Kariper I.; Pakma, Osman (Springer, 2022)his study was formed by the β-naphthol orange/p-Si metal–insulator–semiconductor (MIS) structure by obtaining β-naphthol orange on the p-Si surface using the sol–gel and spin-coating techniques. FTIR, EDX, and NMR analyzes ... -
I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights
Pakma, Osman; Tozlu, Cem; Kavasoglu, Nese; Kavasoglu, A. Sertap; Ozden, Sadan (Springer, 2011)In this study, the current-voltage (I-V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range (100-300 K). These structures have been analyzed according to thermionic ... -
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
Pakma, Osman; Serin, N.; Serin, T.; Altındal, S. (Iop Publishing Ltd, 2008)In this study, the frequency and voltage dependence of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) ... -
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, İ. Afşin (Springer, 2022)In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric ... -
The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
Pakma, Osman; Serin, N.; Serin, Tülay; Altindal, S. (Iop Publishing Ltd, 2008)In this study, we have investigated the intersection behavior of the forward bias current-voltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100 300 K. The intersection behavior ... -
Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)(2) heterojunction solar cells
Turcu, M; Pakma, Osman; Rau, U (Amer Inst Physics, 2002)Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)(2) alloys. The activation energy of ... -
Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
Özden, Şadan; Pakma, Osman (Gazi Univ, 2017)In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures ... -
Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device
Kavasoğlu, Abdulkadir Sertap; Tozlu, Cem; Pakma, Osman; Kavasoğlu, Neşe; Özden, Şadan; Metin, Bengül; Oktik, Şener (Iop Publishing Ltd, 2009)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value ... -
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, Afşin (Springer, 2021)The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters ... -
Physical investigations of vanadium oxide thin films on p-Si substrate
Bilgen, Y.; Pakma, Osman; Kariper, İ. A.; Özden, Şadan (Springer, 2022)In this study, vanadium oxide coated thin films on the p-Si substrate were prepared by the sol-gel method using V2O5 powder as a precursor. The crystal structures, surface morphology, and content of the films were investigated ... -
Room temperature I-V and C-V characteristics of Au/mTPP/p-Si organic MIS devices
Özden, Şadan; Güllü, Ömer; Pakma, Osman (Edp Sciences S A, 2018)The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I V and C V measurements. It has been determined that the device has a high ... -
Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure
Kavasoglu, Nese; Tozlu, Cem; Pakma, Osman; Kavasoglu, A. Sertap; Ozden, Sadan; Metin, Bengul; Oktik, Sener (Elsevier Science Sa, 2009)The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (delta), space charge region width (W(D)), interface state density ... -
Synthesis and characterization of vanadium oxide thin films on different substrates
Pakma, Osman; Özaydın, Cihat; Özden, Şadan; Kariper, İ. Afşin; Güllü, Ömer (Springer, 2017)In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. ... -
Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device
Özden, Şadan; Avcı, Nejmettin; Pakma, Osman; Kariper, İ. Afşin (SPRINGER, 2022)A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the ... -
Temperature Dependent Electrical Transport in Al/Poly(4-vinylphenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method
Özden, Şadan; Tozlu, Cem; Pakma, Osman (Hindawi Ltd, 2016)Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinylphenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. ...
