dc.contributor.author | Can, Hilal Aybike | |
dc.contributor.author | Tönbül, Beyza | |
dc.contributor.author | Pişkin, Fatih | |
dc.contributor.author | Öztürk, Tayfur | |
dc.contributor.author | Akyıldız, Hasan | |
dc.date.accessioned | 2021-03-04T07:15:15Z | |
dc.date.available | 2021-03-04T07:15:15Z | |
dc.date.issued | 2021 | en_US |
dc.identifier.citation | Can, H.A., Tönbül, B., Pişkin, F. et al. Processing optimization of SiO2-capped aluminum-doped ZnO thin films for transparent heater and near-infrared reflecting applications. J Mater Sci: Mater Electron 32, 5116–5137 (2021). https://doi.org/10.1007/s10854-021-05245-6 | en_US |
dc.identifier.issn | 0957-4522 | |
dc.identifier.issn | 1573-482X | |
dc.identifier.uri | https://doi.org/10.1007/s10854-021-05245-6 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12809/8986 | |
dc.description.abstract | In this study, a series of optimization steps were performed in the production of Al-doped ZnO (AZO) thin films to tailor their properties as efficient transparent heaters and for near-infrared (NIR) reflectance. The films were produced on 50 × 75 mm2 glass substrates via magnetron sputtering and capped with a protective SiO2 layer. Processing parameters such as deposition temperature, film thickness, and annealing conditions were all optimized in terms of structure, morphology, optical/electrical properties, and heating/deicing behavior. Electro-thermal characteristics of the films were investigated using a thermal imaging infrared camera under various input voltages. The optimized AZO/SiO2 coatings displayed impressive room-temperature electrical conductivity (σ) of nearly 3774 S/cm with a sheet resistance (Rs) of 3.53 Ω/□, carrier concentration (η) of 1.14 × 1021, and Hall mobility (µ) of 20.48 cm2/Vs. These films exhibited very high optical transmittance (above 96%) in the visible range and reflectance (73% at 2500 nm) in the NIR region. The highest figure of merit (FOM) was achieved as 237 (× 10–3 Ω−1). Deicing tests were performed with samples cooled to − 40 °C and resulted with complete removal of ice/water only within 3 min. In addition, the heater exhibited a high surface temperature of 161 °C (12 V), a good thermal resistance value (219 °C cm2/Watts) with stable and reversible heating behavior. More importantly, these results reveal the potential of optimized AZO/SiO2 coatings as alternatives to transparent tin-doped indium oxide heaters and NIR reflecting mirrors for vehicular applications. | en_US |
dc.item-language.iso | eng | en_US |
dc.publisher | Springer | en_US |
dc.relation.isversionof | 10.1007/s10854-021-05245-6 | en_US |
dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | SiO2 | en_US |
dc.subject | ZnO | en_US |
dc.subject | Capped aluminum | en_US |
dc.subject | Transparent heater | en_US |
dc.title | Processing optimization of SiO2-capped aluminum-doped ZnO thin films for transparent heater and near-infrared reflecting applications | en_US |
dc.item-type | article | en_US |
dc.contributor.department | MÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümü | en_US |
dc.contributor.authorID | 0000-0002-5321-0381 | en_US |
dc.contributor.institutionauthor | Pişkin, Fatih | |
dc.relation.journal | Journal of Materials Science: Materials in Electronics | en_US |
dc.relation.tubitak | 118M013 | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |