Yazar "Kavasoglu, Nese" için listeleme
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Admittance spectroscopy of spray-pyrolyzed ZnO film
Kavasoglu, Nese; Kavasoglu, A. Sertap (Elsevier Science Bv, 2008)A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper ... -
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
Kavasoglu, A. Sertap; Yakuphanoglu, Fahrettin; Kavasoglu, Nese; Pakma, Osman; Birgi, Ozcan; Oktik, Sener (Elsevier Science Sa, 2010)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
Application of Beta model to heterojunction structure
Kavasoglu, A. Sertap; Kavasoglu, Nese (Elsevier Science Bv, 2009)The diode ideality factor is an important parameter in the description of device's electrical behavior. Our goal in this work is to find a practical Procedure for determination of diode ideality factors of heterojunction ... -
The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell
Kavasoglu, A. Sertap; Kavasoglu, Nese; Oktik, Sener (Pergamon-Elsevier Science Ltd, 2009)The open circuit voltage decay (OCVD) technique has been used to determine the minority carrier lifetime. In this study, an experimental and analytical method is described for determination of minority carrier lifetime at ... -
Design and implementation of a low-cost multi-channel temperature measurement system for photovoltaic modules
Eke, Rustu; Kavasoglu, A. Sertap; Kavasoglu, Nese (Elsevier Sci Ltd, 2012)An efficient and low-cost temperature logging system with a 16-channel input was developed for measurements of photovoltaic module temperature. This paper reports the principle of operation, design aspects, as well as the ... -
Electrical characterization of a-Si:H(n)/c-Si(p) structure
Kavasoglu, A. Sertap; Birgi, Ozcan; Kavasoglu, Nese; Oylumluoglu, Gorkem; Kodolbas, A. Osman; Kangi, Rifat; Yilmaz, Okan (Elsevier Science Sa, 2011)In this study, n-type hydrogenated amorphous silicon (a-Si:H) was fabricated on p-type crystalline silicon (c-Si) substrates to obtain heterojunction diodes. The amorphous films were obtained by the Plasma Enhanced Chemical ... -
Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study
Kavasoglu, A. Sertap; Kavasoglu, Nese; Oylumluoglu, Gorkem (Elsevier Science Sa, 2011)GaN based devices are highly promising optoelectronic devices for many years due to their useful applications in photovoltaic energy conversation, fiber optic communication and atmosphere monitoring. GaN based devices such ... -
Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure
Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul (Elsevier Science Bv, 2013)Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been ... -
I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights
Pakma, Osman; Tozlu, Cem; Kavasoglu, Nese; Kavasoglu, A. Sertap; Ozden, Sadan (Springer, 2011)In this study, the current-voltage (I-V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range (100-300 K). These structures have been analyzed according to thermionic ... -
The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
Oylumluoglu, Gorkem; Kavasoglu, A. Sertap; Kavasoglu, Nese (Elsevier Science Sa, 2012)The dielectric properties of the devices can be studied by using admittance spectroscopy (AS). Majority carrier traps are experimentally analyzed without sophisticated mathematical manipulation. Experimental evidence ... -
Intensity modulated short circuit current spectroscopy for solar cells
Kavasoglu, Nese; Kavasoglu, A. Sertap; Birgi, Ozcan; Oktik, Sener (Elsevier Science Bv, 2011)Understanding charge separation and transport is momentously important for the rectification of solar cell performance. To probe photo-generated carrier dynamics, we implemented intensity modulated short circuit current ... -
Metal-semiconductor transition in undoped ZnO films deposited by spray pyrolysis
Kavasoglu, Nese; Kavasoglu, A. Sertap (Elsevier Science Bv, 2008)ZnO films were deposited on glass substrate by using spray pyrolysis method. Films were deposited at different solution molarities 0.02 and 0.1 M. The films are highly transparent in the visible range of the electromagnetic ... -
Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure
Kavasoglu, A. Sertap; Kavasoglu, Nese; Kodolbas, A. Osman; Birgi, Ozcan; Oktu, Ozcan; Oktik, Sener (Elsevier, 2010)Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of experimental data. To explain NC effect, we have performed dark current ... -
A new method of diode ideality factor extraction from dark I-V curve
Kavasoglu, Nese; Kavasoglu, A. Sertap; Oktik, Sener (Elsevier Science Bv, 2009)Most of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two linear regions in the log I-V (current-voltage) graph Of Unipolar ... -
Photocapacitance study at p-i-n photodiode by numerical C-V integration
Kavasoglu, A. Sertap; Kavasoglu, Nese; Oktik, Sener (Pergamon-Elsevier Science Ltd, 2009)This paper describes a different numerical approach to estimate the impurity profile in a typical p-i-n device by using measured capacitance-voltage (C-V) characteristics. The constructed numerical model has been found to ... -
Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure
Kavasoglu, Nese; Tozlu, Cem; Pakma, Osman; Kavasoglu, A. Sertap; Ozden, Sadan; Metin, Bengul; Oktik, Sener (Elsevier Science Sa, 2009)The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (delta), space charge region width (W(D)), interface state density ...
